IXDN55N120D1 - Ixys Corporation Korea Sales

BRAND	Ixys Corporation
Product	IXDN55N120D1
Description	single transistor
Internal code	IMP4448677
Technical specification	Continuous collector current max. = 100 A collector emitter- = 1200 V gate-source voltage max. = ±20V Power dissipation max. = 450 W Case Sise=SOT-227B Mounting type = SMD Channel type = N number of pins = 4 switching speed = 1MHz Transistor configuration = easy Dimensions = 38.2 x 25.07 x 9.6mm Max. operating temperature = +150°C

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