| BRAND | Infineon |
| Product | BSM50GX120DN2 |
| Description | IGBT Modules |
| Internal code | IMP4356305 |
| Technical specification | Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 200 nA Pd - Power Dissipation: 400 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C |
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MOSFET
IGBT-Module
MOSFET
diode-thyristor module
IGBT module
IGBT Module
Phase Control Thyristor
Thyristor-module
Rectifier Diode Module
MODULE IGBT
Module
Transistor
3 Phase Bridge Diode
Thyristor